IPP65R190CFD7AAKSA1
ActiveInfineon Technologies
MOSFET, N-CH, 650V, 14A, TO-220 ROHS COMPLIANT: YES
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IPP65R190CFD7AAKSA1
ActiveInfineon Technologies
MOSFET, N-CH, 650V, 14A, TO-220 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPP65R190CFD7AAKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14 A |
| Drain to Source Voltage (Vdss) | 650 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 28 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1291 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 77 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 190 mOhm |
| Supplier Device Package | PG-TO220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPP65R190 Series
The 190mOhm IPP65R190CFD7A in TO-220 package is part of the automotive-qualified 650V CoolMOS™ SJ powerMOSFET CFD7Aproduct family. As compared to the previous generation,CoolMOS™ CFD7Aoffers higher reliability and power density while increasing design flexibility.