IPD70P04P4L08AUMA2

Obsolete

Infineon Technologies

MOSFET

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IPD70P04P4L08AUMA2

Obsolete

Infineon Technologies

MOSFET

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD70P04P4L08AUMA2

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Input Capacitance (Ciss) (Max) @ Vds	5430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	75 W
Rds On (Max) @ Id, Vgs	7.8 mOhm
Supplier Device Package	PG-TO252-3-313
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	5 V
Vgs (Max) [Min]	-16 V
Vgs(th) (Max) @ Id	2.2 V

IPD70 Series

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Qualification	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]
Infineon Technologies IPD70R950CEAUMA1	15.3 nC	N-Channel	7.4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	328 pF	20 V	10 V	150 °C	-40 °C	PG-TO252-3	950 mOhm	700 V	3.5 V	68 W	Surface Mount	MOSFET (Metal Oxide)
Infineon Technologies IPD70R900P7SAUMA1		N-Channel	6 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		16 V	10 V	150 °C	-40 °C	PG-TO252-3	900 mOhm	700 V	3.5 V		Surface Mount	MOSFET (Metal Oxide)	211 pF	30.5 W	6.8 nC
Infineon Technologies IPD70N12S3L12ATMA1		N-Channel	70 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	5550 pF	20 V	4.5 V 10 V	175 ░C	-55 °C	PG-TO252-3-11		120 V	2.4 V	125 W	Surface Mount	MOSFET (Metal Oxide)			77 nC	Automotive	AEC-Q101
Infineon Technologies IPD70R1K4CEAUMA1	10.5 nC	N-Channel	5.4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	225 pF	20 V	10 V	150 °C	-40 °C	PG-TO252-3	1.4 Ohm	700 V	3.5 V	53 W	Surface Mount	MOSFET (Metal Oxide)
Infineon Technologies IPD70R600P7SAUMA1	10.5 nC	N-Channel	8.5 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	364 pF	16 V	10 V	150 °C	-40 °C	PG-TO252-3	600 mOhm	700 V	3.5 V	43 W	Surface Mount	MOSFET (Metal Oxide)
Infineon Technologies IPD70N03S4L04ATMA1		N-Channel	70 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	3300 pF	16 V	4.5 V 10 V	175 ░C	-55 °C	PG-TO252-3-11		30 V	2.2 V	68 W	Surface Mount	MOSFET (Metal Oxide)			48 nC			4.3 mOhm
Infineon Technologies IPD70R360P7SAUMA1	16.4 nC	N-Channel	12.5 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	517 pF	16 V	10 V	150 °C	-40 °C	PG-TO252-3	360 mOhm	700 V	3.5 V		Surface Mount	MOSFET (Metal Oxide)		59.4 W
Infineon Technologies IPD70P04P4L08AUMA2	92 nC	P-Channel	70 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	5430 pF		4.5 V 10 V	175 ░C	-55 °C	PG-TO252-3-313	7.8 mOhm	40 V	2.2 V	75 W	Surface Mount	MOSFET (Metal Oxide)							5 V	-16 V
Infineon Technologies IPD70R1K4P7SAUMA1		N-Channel	4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	158 pF	16 V	10 V	150 °C	-40 °C	PG-TO252-3	1.4 Ohm	700 V	3.5 V	23 W	Surface Mount	MOSFET (Metal Oxide)			4.7 nC
Infineon Technologies IPD70P04P409ATMA2		P-Channel	73 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	4810 pF	20 V		175 ░C	-55 °C	PG-TO252-3-313	8.9 mOhm	40 V	4 V	75 W	Surface Mount	MOSFET (Metal Oxide)			70 nC	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPD70 Series

P-Channel 40 V 70A (Tc) 75W (Tc) Surface Mount PG-TO252-3-313

Documents

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