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IPD70R360P7SAUMA1 - PG-TO252-3

IPD70R360P7SAUMA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 700 V ; DPAK TO-252 PACKAGE; 360 MOHM; PRICE/PERFORMANCE

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IPD70R360P7SAUMA1 - PG-TO252-3

IPD70R360P7SAUMA1

Active
Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 700 V ; DPAK TO-252 PACKAGE; 360 MOHM; PRICE/PERFORMANCE

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DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD70R360P7SAUMA1
Current - Continuous Drain (Id) @ 25°C12.5 A
Drain to Source Voltage (Vdss)700 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs16.4 nC
Input Capacitance (Ciss) (Max) @ Vds517 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]59.4 W
Rds On (Max) @ Id, Vgs360 mOhm
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id3.5 V

IPD70 Series

PartGate Charge (Qg) (Max) @ VgsFET TypeCurrent - Continuous Drain (Id) @ 25°CPackage / CaseInput Capacitance (Ciss) (Max) @ VdsVgs (Max)Drive Voltage (Max Rds On, Min Rds On)Operating Temperature [Max]Operating Temperature [Min]Supplier Device PackageRds On (Max) @ Id, VgsDrain to Source Voltage (Vdss)Vgs(th) (Max) @ IdPower Dissipation (Max)Mounting TypeTechnologyInput Capacitance (Ciss) (Max) @ Vds [Max]Power Dissipation (Max) [Max]Gate Charge (Qg) (Max) @ Vgs [Max]GradeQualificationRds On (Max) @ Id, Vgs [Max]Vgs (Max) [Max]Vgs (Max) [Min]
Infineon Technologies
15.3 nC
N-Channel
7.4 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
328 pF
20 V
10 V
150 °C
-40 °C
PG-TO252-3
950 mOhm
700 V
3.5 V
68 W
Surface Mount
MOSFET (Metal Oxide)
Infineon Technologies
N-Channel
6 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
16 V
10 V
150 °C
-40 °C
PG-TO252-3
900 mOhm
700 V
3.5 V
Surface Mount
MOSFET (Metal Oxide)
211 pF
30.5 W
6.8 nC
Infineon Technologies
N-Channel
70 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
5550 pF
20 V
4.5 V
10 V
175 ░C
-55 °C
PG-TO252-3-11
120 V
2.4 V
125 W
Surface Mount
MOSFET (Metal Oxide)
77 nC
Automotive
AEC-Q101
Infineon Technologies
10.5 nC
N-Channel
5.4 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
225 pF
20 V
10 V
150 °C
-40 °C
PG-TO252-3
1.4 Ohm
700 V
3.5 V
53 W
Surface Mount
MOSFET (Metal Oxide)
Infineon Technologies
10.5 nC
N-Channel
8.5 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
364 pF
16 V
10 V
150 °C
-40 °C
PG-TO252-3
600 mOhm
700 V
3.5 V
43 W
Surface Mount
MOSFET (Metal Oxide)
Infineon Technologies
N-Channel
70 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
3300 pF
16 V
4.5 V
10 V
175 ░C
-55 °C
PG-TO252-3-11
30 V
2.2 V
68 W
Surface Mount
MOSFET (Metal Oxide)
48 nC
4.3 mOhm
Infineon Technologies
16.4 nC
N-Channel
12.5 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
517 pF
16 V
10 V
150 °C
-40 °C
PG-TO252-3
360 mOhm
700 V
3.5 V
Surface Mount
MOSFET (Metal Oxide)
59.4 W
Infineon Technologies
92 nC
P-Channel
70 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
5430 pF
4.5 V
10 V
175 ░C
-55 °C
PG-TO252-3-313
7.8 mOhm
40 V
2.2 V
75 W
Surface Mount
MOSFET (Metal Oxide)
5 V
-16 V
Infineon Technologies
N-Channel
4 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
158 pF
16 V
10 V
150 °C
-40 °C
PG-TO252-3
1.4 Ohm
700 V
3.5 V
23 W
Surface Mount
MOSFET (Metal Oxide)
4.7 nC
Infineon Technologies
P-Channel
73 A
DPAK (2 Leads + Tab)
SC-63
TO-252-3
4810 pF
20 V
175 ░C
-55 °C
PG-TO252-3-313
8.9 mOhm
40 V
4 V
75 W
Surface Mount
MOSFET (Metal Oxide)
70 nC
Automotive
AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.69
10$ 0.59
100$ 0.45
500$ 0.44
1000$ 0.39
Digi-Reel® 1$ 0.69
10$ 0.59
100$ 0.45
500$ 0.44
1000$ 0.39
Tape & Reel (TR) 2500$ 0.33
NewarkEach (Supplied on Cut Tape) 1$ 1.14
10$ 0.87
25$ 0.81
50$ 0.75

Description

General part information

IPD70 Series

Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new700V CoolMOS™ P7superjunction MOSFET series addresses the low power SMPS market, such as mobile phonechargersor notebookadaptersby offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:

Documents

Technical documentation and resources