MOSFET N-CH 700V 7.4A TO252-3
| Part | Gate Charge (Qg) (Max) @ Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Mounting Type | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Grade | Qualification | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) [Max] | Vgs (Max) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 15.3 nC | N-Channel | 7.4 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 328 pF | 20 V | 10 V | 150 °C | -40 °C | PG-TO252-3 | 950 mOhm | 700 V | 3.5 V | 68 W | Surface Mount | MOSFET (Metal Oxide) | ||||||||
Infineon Technologies | N-Channel | 6 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 16 V | 10 V | 150 °C | -40 °C | PG-TO252-3 | 900 mOhm | 700 V | 3.5 V | Surface Mount | MOSFET (Metal Oxide) | 211 pF | 30.5 W | 6.8 nC | ||||||||
Infineon Technologies | N-Channel | 70 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 5550 pF | 20 V | 4.5 V 10 V | 175 ░C | -55 °C | PG-TO252-3-11 | 120 V | 2.4 V | 125 W | Surface Mount | MOSFET (Metal Oxide) | 77 nC | Automotive | AEC-Q101 | |||||||
Infineon Technologies | 10.5 nC | N-Channel | 5.4 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 225 pF | 20 V | 10 V | 150 °C | -40 °C | PG-TO252-3 | 1.4 Ohm | 700 V | 3.5 V | 53 W | Surface Mount | MOSFET (Metal Oxide) | ||||||||
Infineon Technologies | 10.5 nC | N-Channel | 8.5 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 364 pF | 16 V | 10 V | 150 °C | -40 °C | PG-TO252-3 | 600 mOhm | 700 V | 3.5 V | 43 W | Surface Mount | MOSFET (Metal Oxide) | ||||||||
Infineon Technologies | N-Channel | 70 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 3300 pF | 16 V | 4.5 V 10 V | 175 ░C | -55 °C | PG-TO252-3-11 | 30 V | 2.2 V | 68 W | Surface Mount | MOSFET (Metal Oxide) | 48 nC | 4.3 mOhm | ||||||||
Infineon Technologies | 16.4 nC | N-Channel | 12.5 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 517 pF | 16 V | 10 V | 150 °C | -40 °C | PG-TO252-3 | 360 mOhm | 700 V | 3.5 V | Surface Mount | MOSFET (Metal Oxide) | 59.4 W | ||||||||
Infineon Technologies | 92 nC | P-Channel | 70 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 5430 pF | 4.5 V 10 V | 175 ░C | -55 °C | PG-TO252-3-313 | 7.8 mOhm | 40 V | 2.2 V | 75 W | Surface Mount | MOSFET (Metal Oxide) | 5 V | -16 V | |||||||
Infineon Technologies | N-Channel | 4 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 158 pF | 16 V | 10 V | 150 °C | -40 °C | PG-TO252-3 | 1.4 Ohm | 700 V | 3.5 V | 23 W | Surface Mount | MOSFET (Metal Oxide) | 4.7 nC | ||||||||
Infineon Technologies | P-Channel | 73 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4810 pF | 20 V | 175 ░C | -55 °C | PG-TO252-3-313 | 8.9 mOhm | 40 V | 4 V | 75 W | Surface Mount | MOSFET (Metal Oxide) | 70 nC | Automotive | AEC-Q101 |