IPD70R600P7SAUMA1

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Infineon Technologies

POWER MOSFET, N CHANNEL, 700 V, 8.5 A, 0.49 OHM, TO-252 (DPAK), SURFACE MOUNT

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IPD70R600P7SAUMA1

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Infineon Technologies

POWER MOSFET, N CHANNEL, 700 V, 8.5 A, 0.49 OHM, TO-252 (DPAK), SURFACE MOUNT

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Technical Specifications

Parameters and characteristics for this part

Specification	IPD70R600P7SAUMA1

Current - Continuous Drain (Id) @ 25°C	8.5 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	364 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	43 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3.5 V

IPD70 Series

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Qualification	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]
Infineon Technologies IPD70R950CEAUMA1	15.3 nC	N-Channel	7.4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	328 pF	20 V	10 V	150 °C	-40 °C	PG-TO252-3	950 mOhm	700 V	3.5 V	68 W	Surface Mount	MOSFET (Metal Oxide)
Infineon Technologies IPD70R900P7SAUMA1		N-Channel	6 A	DPAK (2 Leads + Tab) SC-63 TO-252-3		16 V	10 V	150 °C	-40 °C	PG-TO252-3	900 mOhm	700 V	3.5 V		Surface Mount	MOSFET (Metal Oxide)	211 pF	30.5 W	6.8 nC
Infineon Technologies IPD70N12S3L12ATMA1		N-Channel	70 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	5550 pF	20 V	4.5 V 10 V	175 ░C	-55 °C	PG-TO252-3-11		120 V	2.4 V	125 W	Surface Mount	MOSFET (Metal Oxide)			77 nC	Automotive	AEC-Q101
Infineon Technologies IPD70R1K4CEAUMA1	10.5 nC	N-Channel	5.4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	225 pF	20 V	10 V	150 °C	-40 °C	PG-TO252-3	1.4 Ohm	700 V	3.5 V	53 W	Surface Mount	MOSFET (Metal Oxide)
Infineon Technologies IPD70R600P7SAUMA1	10.5 nC	N-Channel	8.5 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	364 pF	16 V	10 V	150 °C	-40 °C	PG-TO252-3	600 mOhm	700 V	3.5 V	43 W	Surface Mount	MOSFET (Metal Oxide)
Infineon Technologies IPD70N03S4L04ATMA1		N-Channel	70 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	3300 pF	16 V	4.5 V 10 V	175 ░C	-55 °C	PG-TO252-3-11		30 V	2.2 V	68 W	Surface Mount	MOSFET (Metal Oxide)			48 nC			4.3 mOhm
Infineon Technologies IPD70R360P7SAUMA1	16.4 nC	N-Channel	12.5 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	517 pF	16 V	10 V	150 °C	-40 °C	PG-TO252-3	360 mOhm	700 V	3.5 V		Surface Mount	MOSFET (Metal Oxide)		59.4 W
Infineon Technologies IPD70P04P4L08AUMA2	92 nC	P-Channel	70 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	5430 pF		4.5 V 10 V	175 ░C	-55 °C	PG-TO252-3-313	7.8 mOhm	40 V	2.2 V	75 W	Surface Mount	MOSFET (Metal Oxide)							5 V	-16 V
Infineon Technologies IPD70R1K4P7SAUMA1		N-Channel	4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	158 pF	16 V	10 V	150 °C	-40 °C	PG-TO252-3	1.4 Ohm	700 V	3.5 V	23 W	Surface Mount	MOSFET (Metal Oxide)			4.7 nC
Infineon Technologies IPD70P04P409ATMA2		P-Channel	73 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	4810 pF	20 V		175 ░C	-55 °C	PG-TO252-3-313	8.9 mOhm	40 V	4 V	75 W	Surface Mount	MOSFET (Metal Oxide)			70 nC	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.25
		10	$ 0.79
		100	$ 0.52
		500	$ 0.40
		1000	$ 0.37
	Digi-Reel®	1	$ 1.25
		10	$ 0.79
		100	$ 0.52
		500	$ 0.40
		1000	$ 0.37
	Tape & Reel (TR)	2500	$ 0.33
		5000	$ 0.30
		7500	$ 0.29
		12500	$ 0.28

Description

General part information

IPD70 Series

700V CoolMOS™ P7 power transistor a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and recommended for Flyback topologies for example used in chargers, adapters, lighting applications, etc.

Documents

Technical documentation and resources