DMN67D8L-7
ActiveDiodes Inc
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.21A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,
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DMN67D8L-7
ActiveDiodes Inc
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.21A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,
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Technical Specifications
Parameters and characteristics for this part
| Specification | DMN67D8L-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 210 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 0.82 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 22 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 340 mW |
| Rds On (Max) @ Id, Vgs | 5 Ohm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 2.5 V |
DMN67D8LW Series
60V N-Channel Enhancement Mode MOSFET
| Part | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs(th) (Max) @ Id | Supplier Device Package | Drain to Source Voltage (Vdss) | Package / Case | FET Type | Technology | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | |||||||||||||||||||
Diodes Inc | |||||||||||||||||||
Diodes Inc | 320 mW | 10 V | 5 V | 22 pF | 0.82 nC | 30 V | 240 mA | -55 °C | 150 °C | 5 Ohm | Surface Mount | 2.5 V | SOT-323 | 60 V | SC-70 SOT-323 | N-Channel | MOSFET (Metal Oxide) | ||
Diodes Inc | 10 V | 5 V | 22 pF | 0.82 nC | 30 V | 210 mA | -55 °C | 150 °C | 5 Ohm | Surface Mount | 2.5 V | SOT-23-3 | 60 V | SC-59 SOT-23-3 TO-236-3 | N-Channel | MOSFET (Metal Oxide) | 340 mW | ||
Diodes Inc | 10 V | 5 V | 22 pF | 0.82 nC | 30 V | 210 mA | -55 °C | 150 °C | 5 Ohm | Surface Mount | 2.5 V | SOT-23-3 | 60 V | SC-59 SOT-23-3 TO-236-3 | N-Channel | MOSFET (Metal Oxide) | 340 mW | ||
Diodes Inc | 260 mW | 10 V | 5 V | 22 pF | 821 nC | 20 V | 210 mA | -55 °C | 150 °C | 5 Ohm | Surface Mount | 2.5 V | SOT-523 | 60 V | SOT-523 | N-Channel | MOSFET (Metal Oxide) | 10 V | |
Diodes Inc | 320 mW | 10 V | 5 V | 22 pF | 0.82 nC | 30 V | 240 mA | -55 °C | 150 °C | 5 Ohm | Surface Mount | 2.5 V | SOT-323 | 60 V | SC-70 SOT-323 | N-Channel | MOSFET (Metal Oxide) | ||
Diodes Inc | 570 mW | 10 V | 5 V | 22 pF | 40 V | 210 mA | -55 °C | 150 °C | 5 Ohm | Surface Mount | 2.5 V | SOT-23-3 | 60 V | SC-59 SOT-23-3 TO-236-3 | N-Channel | MOSFET (Metal Oxide) | 0.821 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.19 | |
| 10 | $ 0.14 | |||
| 100 | $ 0.07 | |||
| 500 | $ 0.06 | |||
| 1000 | $ 0.04 | |||
| Digi-Reel® | 1 | $ 0.19 | ||
| 10 | $ 0.14 | |||
| 100 | $ 0.07 | |||
| 500 | $ 0.06 | |||
| 1000 | $ 0.04 | |||
| Tape & Reel (TR) | 3000 | $ 0.03 | ||
| 6000 | $ 0.03 | |||
| 9000 | $ 0.03 | |||
| 30000 | $ 0.02 | |||
| 75000 | $ 0.02 | |||
| 150000 | $ 0.02 | |||
Description
General part information
DMN67D8LW Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources