DMN67D8LW Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMN67D8LV-7
Diodes Inc DMN67D8LV-13
Diodes Inc DMN67D8LW-13	320 mW	10 V	5 V	22 pF	0.82 nC	30 V	240 mA	-55 °C	150 °C	5 Ohm	Surface Mount	2.5 V	SOT-323	60 V	SC-70 SOT-323	N-Channel	MOSFET (Metal Oxide)
Diodes Inc DMN67D8L-7		10 V	5 V	22 pF	0.82 nC	30 V	210 mA	-55 °C	150 °C	5 Ohm	Surface Mount	2.5 V	SOT-23-3	60 V	SC-59 SOT-23-3 TO-236-3	N-Channel	MOSFET (Metal Oxide)	340 mW
Diodes Inc DMN67D8L-13		10 V	5 V	22 pF	0.82 nC	30 V	210 mA	-55 °C	150 °C	5 Ohm	Surface Mount	2.5 V	SOT-23-3	60 V	SC-59 SOT-23-3 TO-236-3	N-Channel	MOSFET (Metal Oxide)	340 mW
Diodes Inc DMN67D8LT-13	260 mW	10 V	5 V	22 pF	821 nC	20 V	210 mA	-55 °C	150 °C	5 Ohm	Surface Mount	2.5 V	SOT-523	60 V	SOT-523	N-Channel	MOSFET (Metal Oxide)		10 V
Diodes Inc DMN67D8LW-7	320 mW	10 V	5 V	22 pF	0.82 nC	30 V	240 mA	-55 °C	150 °C	5 Ohm	Surface Mount	2.5 V	SOT-323	60 V	SC-70 SOT-323	N-Channel	MOSFET (Metal Oxide)
Diodes Inc DMN67D7L-7	570 mW	10 V	5 V	22 pF		40 V	210 mA	-55 °C	150 °C	5 Ohm	Surface Mount	2.5 V	SOT-23-3	60 V	SC-59 SOT-23-3 TO-236-3	N-Channel	MOSFET (Metal Oxide)		0.821 nC

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance: RDS(ON)

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF16949 certified facilities), pleasecontact usor your local Diodes representative.

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.