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DMN67D8LW-13 - SOT-323

DMN67D8LW-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN67D8LW-13 - SOT-323

DMN67D8LW-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN67D8LW-13
Current - Continuous Drain (Id) @ 25°C240 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.82 nC
Input Capacitance (Ciss) (Max) @ Vds22 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-70, SOT-323
Power Dissipation (Max) [Max]320 mW
Rds On (Max) @ Id, Vgs5 Ohm
Supplier Device PackageSOT-323
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.23
10$ 0.16
100$ 0.08
500$ 0.07
1000$ 0.05
2000$ 0.04
5000$ 0.04
Digi-Reel® 1$ 0.23
10$ 0.16
100$ 0.08
500$ 0.07
1000$ 0.05
2000$ 0.04
5000$ 0.04
Tape & Reel (TR) 10000$ 0.02

Description

General part information

DMN67D8LW Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.