DMN67D8LW-7

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Diodes Inc

TRANSISTOR: N-MOSFET; UNIPOLAR; 60V; 180MA; IDM: 0.8A; 470MW; SOT323

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DMN67D8LW-7

Active

Diodes Inc

TRANSISTOR: N-MOSFET; UNIPOLAR; 60V; 180MA; IDM: 0.8A; 470MW; SOT323

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN67D8LW-7

Current - Continuous Drain (Id) @ 25°C	240 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.82 nC
Input Capacitance (Ciss) (Max) @ Vds	22 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	320 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	2.5 V

DMN67D8LW Series

60V N-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMN67D8LV-7
Diodes Inc DMN67D8LV-13
Diodes Inc DMN67D8LW-13	320 mW	10 V	5 V	22 pF	0.82 nC	30 V	240 mA	-55 °C	150 °C	5 Ohm	Surface Mount	2.5 V	SOT-323	60 V	SC-70 SOT-323	N-Channel	MOSFET (Metal Oxide)
Diodes Inc DMN67D8L-7		10 V	5 V	22 pF	0.82 nC	30 V	210 mA	-55 °C	150 °C	5 Ohm	Surface Mount	2.5 V	SOT-23-3	60 V	SC-59 SOT-23-3 TO-236-3	N-Channel	MOSFET (Metal Oxide)	340 mW
Diodes Inc DMN67D8L-13		10 V	5 V	22 pF	0.82 nC	30 V	210 mA	-55 °C	150 °C	5 Ohm	Surface Mount	2.5 V	SOT-23-3	60 V	SC-59 SOT-23-3 TO-236-3	N-Channel	MOSFET (Metal Oxide)	340 mW
Diodes Inc DMN67D8LT-13	260 mW	10 V	5 V	22 pF	821 nC	20 V	210 mA	-55 °C	150 °C	5 Ohm	Surface Mount	2.5 V	SOT-523	60 V	SOT-523	N-Channel	MOSFET (Metal Oxide)		10 V
Diodes Inc DMN67D8LW-7	320 mW	10 V	5 V	22 pF	0.82 nC	30 V	240 mA	-55 °C	150 °C	5 Ohm	Surface Mount	2.5 V	SOT-323	60 V	SC-70 SOT-323	N-Channel	MOSFET (Metal Oxide)
Diodes Inc DMN67D7L-7	570 mW	10 V	5 V	22 pF		40 V	210 mA	-55 °C	150 °C	5 Ohm	Surface Mount	2.5 V	SOT-23-3	60 V	SC-59 SOT-23-3 TO-236-3	N-Channel	MOSFET (Metal Oxide)		0.821 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.22
		10	$ 0.15
		100	$ 0.07
		500	$ 0.06
		1000	$ 0.04
	Digi-Reel®	1	$ 0.22
		10	$ 0.15
		100	$ 0.07
		500	$ 0.06
		1000	$ 0.04
	Tape & Reel (TR)	3000	$ 0.04
		6000	$ 0.03
		9000	$ 0.03
		30000	$ 0.03
		75000	$ 0.02
		150000	$ 0.02
TME	N/A	1	$ 0.23
		10	$ 0.14
		20	$ 0.12
		100	$ 0.07

Description

General part information

DMN67D8LW Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DMN67D8LW-7

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DMN67D8LW-7

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Technical Specifications

DMN67D8LW Series

Pricing

Description

DMN67D8LW Series

Documents

Package PDF

Datasheet

Recommended Soldering Techniques

Datasheet

DMN67D8LW Series