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DMN3009SFG-7 - PowerDI3333-8

DMN3009SFG-7

Active
Diodes Inc

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN3009SFG-7 - PowerDI3333-8

DMN3009SFG-7

Active
Diodes Inc

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN3009SFG-7
Current - Continuous Drain (Id) @ 25°C16 A, 45 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC
Input Capacitance (Ciss) (Max) @ Vds2000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]900 mW
Rds On (Max) @ Id, Vgs [Max]5.5 mOhm
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.75
10$ 0.65
100$ 0.45
500$ 0.38
1000$ 0.32
Digi-Reel® 1$ 0.75
10$ 0.65
100$ 0.45
500$ 0.38
1000$ 0.32
Tape & Reel (TR) 2000$ 0.26

Description

General part information

DMN3009LFVWQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.