DMN3009LFV-13

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Diodes Inc

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN3009LFV-13

Active

Diodes Inc

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3009LFV-13

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

DMN3009LFVWQ Series

30V N-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Qualification	Grade	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
Diodes Inc DMN3009SSS-13	1.4 W	30 V	N-Channel	2000 pF	Surface Mount	42 nC	15 A	-55 °C	150 °C	4.5 V 10 V	2.5 V	20 V	8-SO	MOSFET (Metal Oxide)	5.5 mOhm	8-SOIC	3.9 mm	0.154 in
Diodes Inc DMN3009LFVWQ-13	1 W	30 V	N-Channel	2000 pF	Surface Mount Wettable Flank	42 nC	60 A	-55 °C	150 °C	4.5 V 10 V	2.5 V	20 V	PowerDI3333-8 (SWP) Type UX	MOSFET (Metal Oxide)	5 mOhm	8-PowerVDFN			AEC-Q101	Automotive
Diodes Inc DMN3009LFV-13		30 V	N-Channel	2000 pF	Surface Mount	42 nC	60 A	-55 °C	150 °C	4.5 V 10 V	3 V	20 V	POWERDI3333-8	MOSFET (Metal Oxide)	5.5 mOhm	8-PowerVDFN					2 W
Diodes Inc DMN3009SFG-7		30 V	N-Channel	2000 pF	Surface Mount	42 nC	16 A 45 A	-55 °C	150 °C	4.5 V 10 V	2.5 V	20 V	POWERDI3333-8	MOSFET (Metal Oxide)		8-PowerVDFN					900 mW	5.5 mOhm
Diodes Inc DMN3009LFVW-7	1 W	30 V	N-Channel	2000 pF	Surface Mount Wettable Flank	42 nC	60 A	-55 °C	150 °C	4.5 V 10 V	2.5 V	20 V	PowerDI3333-8 (SWP) Type UX	MOSFET (Metal Oxide)	5 mOhm	8-PowerVDFN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	3000	$ 0.18
		6000	$ 0.16
		9000	$ 0.15
		15000	$ 0.15
		21000	$ 0.14
		30000	$ 0.14

Description

General part information

DMN3009LFVWQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.