DMN3009LFVWQ Series

30V N-Channel Enhancement Mode MOSFET

Catalog

30V N-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Qualification	Grade	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
Diodes Inc DMN3009SSS-13	1.4 W	30 V	N-Channel	2000 pF	Surface Mount	42 nC	15 A	-55 °C	150 °C	4.5 V 10 V	2.5 V	20 V	8-SO	MOSFET (Metal Oxide)	5.5 mOhm	8-SOIC	3.9 mm	0.154 in
Diodes Inc DMN3009LFVWQ-13	1 W	30 V	N-Channel	2000 pF	Surface Mount Wettable Flank	42 nC	60 A	-55 °C	150 °C	4.5 V 10 V	2.5 V	20 V	PowerDI3333-8 (SWP) Type UX	MOSFET (Metal Oxide)	5 mOhm	8-PowerVDFN			AEC-Q101	Automotive
Diodes Inc DMN3009LFV-13		30 V	N-Channel	2000 pF	Surface Mount	42 nC	60 A	-55 °C	150 °C	4.5 V 10 V	3 V	20 V	POWERDI3333-8	MOSFET (Metal Oxide)	5.5 mOhm	8-PowerVDFN					2 W
Diodes Inc DMN3009SFG-7		30 V	N-Channel	2000 pF	Surface Mount	42 nC	16 A 45 A	-55 °C	150 °C	4.5 V 10 V	2.5 V	20 V	POWERDI3333-8	MOSFET (Metal Oxide)		8-PowerVDFN					900 mW	5.5 mOhm
Diodes Inc DMN3009LFVW-7	1 W	30 V	N-Channel	2000 pF	Surface Mount Wettable Flank	42 nC	60 A	-55 °C	150 °C	4.5 V 10 V	2.5 V	20 V	PowerDI3333-8 (SWP) Type UX	MOSFET (Metal Oxide)	5 mOhm	8-PowerVDFN

Catalog

30V N-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON) – ensures on state losses are minimized

• Small form factor thermally efficient package enables higher density end products

• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMN3009LFVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.