DMN3009SSS-13

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Diodes Inc

POWER MOSFET, N CHANNEL, 30 V, 15 A, 0.0045 OHM, SOIC, SURFACE MOUNT

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DocumentsProduct Change Notice EN Package PDF +3

DMN3009SSS-13

Active

Diodes Inc

POWER MOSFET, N CHANNEL, 30 V, 15 A, 0.0045 OHM, SOIC, SURFACE MOUNT

Deep-Dive with AI

DocumentsProduct Change Notice EN Package PDF +3

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3009SSS-13

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.4 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

DMN3009LFVWQ Series

30V N-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Qualification	Grade	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
Diodes Inc DMN3009SSS-13	1.4 W	30 V	N-Channel	2000 pF	Surface Mount	42 nC	15 A	-55 °C	150 °C	4.5 V 10 V	2.5 V	20 V	8-SO	MOSFET (Metal Oxide)	5.5 mOhm	8-SOIC	3.9 mm	0.154 in
Diodes Inc DMN3009LFVWQ-13	1 W	30 V	N-Channel	2000 pF	Surface Mount Wettable Flank	42 nC	60 A	-55 °C	150 °C	4.5 V 10 V	2.5 V	20 V	PowerDI3333-8 (SWP) Type UX	MOSFET (Metal Oxide)	5 mOhm	8-PowerVDFN			AEC-Q101	Automotive
Diodes Inc DMN3009LFV-13		30 V	N-Channel	2000 pF	Surface Mount	42 nC	60 A	-55 °C	150 °C	4.5 V 10 V	3 V	20 V	POWERDI3333-8	MOSFET (Metal Oxide)	5.5 mOhm	8-PowerVDFN					2 W
Diodes Inc DMN3009SFG-7		30 V	N-Channel	2000 pF	Surface Mount	42 nC	16 A 45 A	-55 °C	150 °C	4.5 V 10 V	2.5 V	20 V	POWERDI3333-8	MOSFET (Metal Oxide)		8-PowerVDFN					900 mW	5.5 mOhm
Diodes Inc DMN3009LFVW-7	1 W	30 V	N-Channel	2000 pF	Surface Mount Wettable Flank	42 nC	60 A	-55 °C	150 °C	4.5 V 10 V	2.5 V	20 V	PowerDI3333-8 (SWP) Type UX	MOSFET (Metal Oxide)	5 mOhm	8-PowerVDFN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.55
		10	$ 0.48
		100	$ 0.33
		500	$ 0.28
		1000	$ 0.24
	Digi-Reel®	1	$ 0.55
		10	$ 0.48
		100	$ 0.33
		500	$ 0.28
		1000	$ 0.24
	Tape & Reel (TR)	2500	$ 0.21
		5000	$ 0.20
		12500	$ 0.19
Newark	Each (Supplied on Cut Tape)	1	$ 0.89
		10	$ 0.57
		25	$ 0.51
		50	$ 0.45
		100	$ 0.38
		250	$ 0.34
		500	$ 0.30
		1000	$ 0.27

Description

General part information

DMN3009LFVWQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

DMN3009SSS-13

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DMN3009SSS-13

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Technical Specifications

DMN3009LFVWQ Series

Pricing

Description

DMN3009LFVWQ Series

Documents

Product Change Notice EN

Package PDF

Datasheet

Recommended Soldering Techniques

Datasheet

DMN3009LFVWQ Series