DMN2710UT-7
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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DMN2710UT-7
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2710UT-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 870 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 42 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-523 |
| Power Dissipation (Max) [Max] | 320 mW |
| Rds On (Max) @ Id, Vgs | 450 mOhm |
| Supplier Device Package | SOT-523 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 6 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.07 | |
| 6000 | $ 0.07 | |||
| 9000 | $ 0.06 | |||
| 30000 | $ 0.06 | |||
| 75000 | $ 0.05 | |||
| 150000 | $ 0.05 | |||
Description
General part information
DMN2710UDWQ Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources