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DMN2710UWQ-13 - SOT-323

DMN2710UWQ-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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Search across all available documentation for this part.

DocumentsDatasheetRecommended Soldering Techniques+2
DMN2710UWQ-13 - SOT-323

DMN2710UWQ-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheetRecommended Soldering Techniques+2

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2710UWQ-13
Current - Continuous Drain (Id) @ 25°C900 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds42 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-70, SOT-323
Power Dissipation (Max) [Max]470 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs450 mOhm
Supplier Device PackageSOT-323
TechnologyMOSFET (Metal Oxide)
Vgs (Max)6 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.04
30000$ 0.04
50000$ 0.04
100000$ 0.03
250000$ 0.03

Description

General part information

DMN2710UDWQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.