DMN2710UDWQ Series

Dual N-Channel Enhancement Mode MOSFET

Catalog

Dual N-Channel Enhancement Mode MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs (Max)	Supplier Device Package	Grade	Qualification	Configuration	Power - Max [Max]
Diodes Inc DMN2710UT-7	1.8 V 4.5 V	N-Channel	MOSFET (Metal Oxide)	1 V	870 mA	0.6 nC	-55 °C	150 °C	SOT-523	450 mOhm	42 pF	Surface Mount	20 V	320 mW	6 V	SOT-523
Diodes Inc DMN2710UWQ-13	1.8 V 4.5 V	N-Channel	MOSFET (Metal Oxide)	1 V	900 mA	0.6 nC	-55 °C	150 °C	SC-70 SOT-323	450 mOhm	42 pF	Surface Mount	20 V	470 mW	6 V	SOT-323	Automotive	AEC-Q101
Diodes Inc DMN2710UTQ-13	1.8 V 4.5 V	N-Channel	MOSFET (Metal Oxide)	1 V	870 mA	0.6 nC	-55 °C	150 °C	SOT-523	450 mOhm	42 pF	Surface Mount	20 V	320 mW	6 V	SOT-523	Automotive	AEC-Q101
Diodes Inc DMN2710UDW-13			MOSFET (Metal Oxide)	1 V	800 mA	0.6 nC	-55 °C	150 °C	6-TSSOP SC-88 SOT-363	450 mOhm	42 pF	Surface Mount	20 V			SOT-363			2 N-Channel (Dual)	360 mW
Diodes Inc DMN2710UDWQ-13				1 V	800 mA	0.6 nC	-55 °C	150 °C	6-TSSOP SC-88 SOT-363	450 mOhm	42 pF	Surface Mount	20 V			SOT-363	Automotive	AEC-Q101	2 N-Channel (Dual)	360 mW

Catalog

Dual N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Ultra-Small Surface Mount Package

• ESD Protected

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.