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DMN2710UDWQ-13 - Package Image for SOT363

DMN2710UDWQ-13

Active
Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheetRecommended Soldering Techniques+2
DMN2710UDWQ-13 - Package Image for SOT363

DMN2710UDWQ-13

Active
Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheetRecommended Soldering Techniques+2

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2710UDWQ-13
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C800 mA
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs0.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds42 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]360 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs450 mOhm
Supplier Device PackageSOT-363
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.06
20000$ 0.05
30000$ 0.05
50000$ 0.04
70000$ 0.05
100000$ 0.04

Description

General part information

DMN2710UDWQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.