IXFH12N100Q

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IXYS

MOSFET N-CH 1000V 12A TO247AD

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IXYS

MOSFET N-CH 1000V 12A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH12N100Q

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	2900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	300 W
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5.5 V

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXFH12N90	900 mOhm	4200 pF	TO-247-3	TO-247AD (IXFH)	10 V	900 V	Through Hole	20 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	300 W	4.5 V	155 nC	12 A
IXYS IXFH12N120	1.4 Ohm	3400 pF	TO-247-3	TO-247AD (IXFH)	10 V	1200 V	Through Hole	30 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C		5 V	95 nC	12 A	500 W
IXYS IXFH12N50F	400 mOhm	1870 pF	TO-247-3	TO-247 (IXFH)	10 V	500 V	Through Hole	20 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C		5.5 V	54 nC	12 A	180 W
IXYS IXFH12N100Q		2900 pF	TO-247-3	TO-247AD (IXFH)	10 V	1000 V	Through Hole	20 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	300 W	5.5 V		12 A		90 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1000 V 12A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

Technical documentation and resources

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