MOSFET N-CH 900V 12A TO247AD
| Part | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Mounting Type | Vgs (Max) | Technology | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 900 mOhm | 4200 pF | TO-247-3 | TO-247AD (IXFH) | 10 V | 900 V | Through Hole | 20 V | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | 300 W | 4.5 V | 155 nC | 12 A | ||
IXYS | 1.4 Ohm | 3400 pF | TO-247-3 | TO-247AD (IXFH) | 10 V | 1200 V | Through Hole | 30 V | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | 5 V | 95 nC | 12 A | 500 W | ||
IXYS | 400 mOhm | 1870 pF | TO-247-3 | TO-247 (IXFH) | 10 V | 500 V | Through Hole | 20 V | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | 5.5 V | 54 nC | 12 A | 180 W | ||
IXYS | 2900 pF | TO-247-3 | TO-247AD (IXFH) | 10 V | 1000 V | Through Hole | 20 V | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | 300 W | 5.5 V | 12 A | 90 nC |