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IXFH12N50F - TO-247_IXFH

IXFH12N50F

Obsolete
IXYS

MOSFET N-CH 500V 12A TO247

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IXFH12N50F - TO-247_IXFH

IXFH12N50F

Obsolete
IXYS

MOSFET N-CH 500V 12A TO247

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFH12N50F
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs54 nC
Input Capacitance (Ciss) (Max) @ Vds1870 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)180 W
Rds On (Max) @ Id, Vgs400 mOhm
Supplier Device PackageTO-247 (IXFH)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IXFH12 Series

N-Channel 500 V 12A (Tc) 180W (Tc) Through Hole TO-247 (IXFH)

Documents

Technical documentation and resources

No documents available