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IXFH12N120 - HiPerFET_TO-247-3

IXFH12N120

Obsolete
IXYS

MOSFET N-CH 1200V 12A TO247AD

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IXFH12N120 - HiPerFET_TO-247-3

IXFH12N120

Obsolete
IXYS

MOSFET N-CH 1200V 12A TO247AD

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFH12N120
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs95 nC
Input Capacitance (Ciss) (Max) @ Vds3400 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)500 W
Rds On (Max) @ Id, Vgs1.4 Ohm
Supplier Device PackageTO-247AD (IXFH)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IXFH12 Series

N-Channel 1200 V 12A (Tc) 500W (Tc) Through Hole TO-247AD (IXFH)

Documents

Technical documentation and resources

No documents available