IPAW60R280P7SXKSA1

Obsolete

Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 FULLPAK WIDE CREEPAGE PACKAGE; 280 MOHM; PRICE/PERFORMANCE

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IPAW60R280P7SXKSA1

Obsolete

Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 FULLPAK WIDE CREEPAGE PACKAGE; 280 MOHM; PRICE/PERFORMANCE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPAW60R280P7SXKSA1

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	24 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPAW60 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPAW60R360P7SE8228XKSA1	10 V	4 V	9 A	N-Channel	555 pF	22 W	TO-220-3 Full Pack	MOSFET (Metal Oxide)	360 mOhm	20 V	600 V	13 nC	Through Hole	PG-TO220-FP	150 °C	-40 °C
Infineon Technologies IPAW60R180P7SXKSA1	10 V		18 A	N-Channel	1081 pF		TO-220-3 Full Pack	MOSFET (Metal Oxide)	180 mOhm	20 V	650 V	25 nC	Through Hole	PG-TO220 Full Pack	150 °C	-55 °C	4 V	26 W
Infineon Technologies IPAW60R600P7SE8228XKSA1	10 V	4 V	6 A	N-Channel	363 pF		TO-220-3 Full Pack	MOSFET (Metal Oxide)	600 mOhm	20 V	600 V	9 nC	Through Hole	PG-TO220-FP	150 °C	-40 °C		21 W
Infineon Technologies IPAW60R280P7SXKSA1	10 V	4 V	12 A	N-Channel			TO-220-3 Full Pack	MOSFET (Metal Oxide)	280 mOhm	20 V	600 V	18 nC	Through Hole	PG-TO220-FP	150 °C	-40 °C		24 W
Infineon Technologies IPAW60R380CEXKSA1	10 V	3.5 V	15 A	N-Channel	700 pF		TO-220-3 Full Pack	MOSFET (Metal Oxide)	380 mOhm	20 V	600 V		Through Hole	PG-TO220-FP	150 °C	-40 °C		31 W	32 nC
Infineon Technologies IPAW60R190CEXKSA1	10 V		26.7 A	N-Channel			TO-220-3 Full Pack	MOSFET (Metal Oxide)	190 mOhm	20 V	600 V	63 nC	Through Hole	PG-TO220-FP	150 °C	-40 °C	3.5 V	34 W		1400 pF
Infineon Technologies IPAW60R600P7SXKSA1	10 V	4 V	6 A	N-Channel	363 pF		TO-220-3 Full Pack	MOSFET (Metal Oxide)	600 mOhm	20 V	600 V	9 nC	Through Hole	PG-TO220-FP	150 °C	-40 °C		21 W
Infineon Technologies IPAW60R280P7SE8228XKSA1	10 V	4 V	12 A	N-Channel			TO-220-3 Full Pack	MOSFET (Metal Oxide)	280 mOhm	20 V	600 V	18 nC	Through Hole	PG-TO220-FP	150 °C	-40 °C		24 W
Infineon Technologies IPAW60R280CEXKSA1	10 V	3.5 V	19.3 A	N-Channel			TO-220-3 Full Pack Variant	MOSFET (Metal Oxide)	280 mOhm	20 V	600 V		Through Hole	PG-TO220 Full Pack Wide Creepage	150 °C	-40 °C		32 W	43 nC	950 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPAW60 Series

The600V CoolMOS™ P7superjunction (SJ) MOSFET is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Documents

Technical documentation and resources