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IPAW60R180P7SXKSA1 - INFINEON SPA11N80C3XKSA2

IPAW60R180P7SXKSA1

NRND
Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 FULLPAK WIDE CREEPAGE PACKAGE; 180 MOHM; PRICE/PERFORMANCE

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IPAW60R180P7SXKSA1 - INFINEON SPA11N80C3XKSA2

IPAW60R180P7SXKSA1

NRND
Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 FULLPAK WIDE CREEPAGE PACKAGE; 180 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPAW60R180P7SXKSA1
Current - Continuous Drain (Id) @ 25°C18 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]25 nC
Input Capacitance (Ciss) (Max) @ Vds1081 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)26 W
Rds On (Max) @ Id, Vgs180 mOhm
Supplier Device PackagePG-TO220 Full Pack
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.80
10$ 1.16
100$ 0.79
500$ 0.73
NewarkEach 1$ 2.50
10$ 1.97
100$ 1.40
900$ 1.23
1350$ 1.11

Description

General part information

IPAW60 Series

The600V CoolMOS™ P7superjunction (SJ) MOSFET is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Documents

Technical documentation and resources