MOSFET N-CH 600V 9A TO220
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Package / Case | Technology | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 10 V | 4 V | 9 A | N-Channel | 555 pF | 22 W | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 360 mOhm | 20 V | 600 V | 13 nC | Through Hole | PG-TO220-FP | 150 °C | -40 °C | ||||
Infineon Technologies | 10 V | 18 A | N-Channel | 1081 pF | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 180 mOhm | 20 V | 650 V | 25 nC | Through Hole | PG-TO220 Full Pack | 150 °C | -55 °C | 4 V | 26 W | ||||
Infineon Technologies | 10 V | 4 V | 6 A | N-Channel | 363 pF | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 600 mOhm | 20 V | 600 V | 9 nC | Through Hole | PG-TO220-FP | 150 °C | -40 °C | 21 W | ||||
Infineon Technologies | 10 V | 4 V | 12 A | N-Channel | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 280 mOhm | 20 V | 600 V | 18 nC | Through Hole | PG-TO220-FP | 150 °C | -40 °C | 24 W | |||||
Infineon Technologies | 10 V | 3.5 V | 15 A | N-Channel | 700 pF | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 380 mOhm | 20 V | 600 V | Through Hole | PG-TO220-FP | 150 °C | -40 °C | 31 W | 32 nC | ||||
Infineon Technologies | 10 V | 26.7 A | N-Channel | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 190 mOhm | 20 V | 600 V | 63 nC | Through Hole | PG-TO220-FP | 150 °C | -40 °C | 3.5 V | 34 W | 1400 pF | ||||
Infineon Technologies | 10 V | 4 V | 6 A | N-Channel | 363 pF | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 600 mOhm | 20 V | 600 V | 9 nC | Through Hole | PG-TO220-FP | 150 °C | -40 °C | 21 W | ||||
Infineon Technologies | 10 V | 4 V | 12 A | N-Channel | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 280 mOhm | 20 V | 600 V | 18 nC | Through Hole | PG-TO220-FP | 150 °C | -40 °C | 24 W | |||||
Infineon Technologies | 10 V | 3.5 V | 19.3 A | N-Channel | TO-220-3 Full Pack Variant | MOSFET (Metal Oxide) | 280 mOhm | 20 V | 600 V | Through Hole | PG-TO220 Full Pack Wide Creepage | 150 °C | -40 °C | 32 W | 43 nC | 950 pF |