IPAW60R600P7SE8228XKSA1
ActiveInfineon Technologies
MOSFET N-CH 600V 6A TO220
Deep-Dive with AI
Search across all available documentation for this part.
IPAW60R600P7SE8228XKSA1
ActiveInfineon Technologies
MOSFET N-CH 600V 6A TO220
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPAW60R600P7SE8228XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 9 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 363 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 21 W |
| Rds On (Max) @ Id, Vgs | 600 mOhm |
| Supplier Device Package | PG-TO220-FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
IPAW60 Series
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Package / Case | Technology | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 10 V | 4 V | 9 A | N-Channel | 555 pF | 22 W | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 360 mOhm | 20 V | 600 V | 13 nC | Through Hole | PG-TO220-FP | 150 °C | -40 °C | ||||
Infineon Technologies | 10 V | 18 A | N-Channel | 1081 pF | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 180 mOhm | 20 V | 650 V | 25 nC | Through Hole | PG-TO220 Full Pack | 150 °C | -55 °C | 4 V | 26 W | ||||
Infineon Technologies | 10 V | 4 V | 6 A | N-Channel | 363 pF | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 600 mOhm | 20 V | 600 V | 9 nC | Through Hole | PG-TO220-FP | 150 °C | -40 °C | 21 W | ||||
Infineon Technologies | 10 V | 4 V | 12 A | N-Channel | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 280 mOhm | 20 V | 600 V | 18 nC | Through Hole | PG-TO220-FP | 150 °C | -40 °C | 24 W | |||||
Infineon Technologies | 10 V | 3.5 V | 15 A | N-Channel | 700 pF | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 380 mOhm | 20 V | 600 V | Through Hole | PG-TO220-FP | 150 °C | -40 °C | 31 W | 32 nC | ||||
Infineon Technologies | 10 V | 26.7 A | N-Channel | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 190 mOhm | 20 V | 600 V | 63 nC | Through Hole | PG-TO220-FP | 150 °C | -40 °C | 3.5 V | 34 W | 1400 pF | ||||
Infineon Technologies | 10 V | 4 V | 6 A | N-Channel | 363 pF | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 600 mOhm | 20 V | 600 V | 9 nC | Through Hole | PG-TO220-FP | 150 °C | -40 °C | 21 W | ||||
Infineon Technologies | 10 V | 4 V | 12 A | N-Channel | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 280 mOhm | 20 V | 600 V | 18 nC | Through Hole | PG-TO220-FP | 150 °C | -40 °C | 24 W | |||||
Infineon Technologies | 10 V | 3.5 V | 19.3 A | N-Channel | TO-220-3 Full Pack Variant | MOSFET (Metal Oxide) | 280 mOhm | 20 V | 600 V | Through Hole | PG-TO220 Full Pack Wide Creepage | 150 °C | -40 °C | 32 W | 43 nC | 950 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 450 | $ 0.52 | |
Description
General part information
IPAW60 Series
N-Channel 600 V 6A (Tc) 21W (Tc) Through Hole PG-TO220-FP
Documents
Technical documentation and resources
No documents available