IPD60R950C6ATMA1

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Infineon Technologies

POWER MOSFET, COOLMOS, N CHANNEL, 650 V, 5.7 A, 0.68 OHM, TO-252 (DPAK), SURFACE MOUNT

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IPD60R950C6ATMA1

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Infineon Technologies

POWER MOSFET, COOLMOS, N CHANNEL, 650 V, 5.7 A, 0.68 OHM, TO-252 (DPAK), SURFACE MOUNT

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD60R950C6ATMA1

Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	280 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	37 W
Rds On (Max) @ Id, Vgs	950 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPD60R Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max) [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPD60R1K0CEAUMA1	13 nC	6.8 A	600 V	MOSFET (Metal Oxide)	61 W	20 V	10 V	150 °C	-40 °C	Surface Mount	280 pF	N-Channel	1 Ohm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3-344
Infineon Technologies IPD60R520C6BTMA1		8.1 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-55 °C	Surface Mount		N-Channel			DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	66 W	512 pF	520 mOhm	23.4 nC
Infineon Technologies IPD60R380C6ATMA1		10.6 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-55 °C	Surface Mount		N-Channel	380 mOhm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	83 W	700 pF		32 nC
Infineon Technologies IPD60R3K3C6		1.7 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-55 °C	Surface Mount	93 pF	N-Channel	3.3 Ohm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	18.1 W			4.6 nC
Infineon Technologies IPD60R2K0PFD7SAUMA1	3.8 nC	3 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-40 °C	Surface Mount	134 pF	N-Channel	2 Ohm	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3-344	20 W
Infineon Technologies IPD60R1K0PFD7SAUMA1		4.7 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-40 °C	Surface Mount	230 pF	N-Channel	1 Ohm	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	26 W			6 nC
Infineon Technologies IPD60R280P7SE8228AUMA1	18 nC	12 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-40 °C	Surface Mount		N-Channel	280 mOhm	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	53 W
Infineon Technologies IPD60R950C6ATMA1	13 nC	4.4 A	600 V	MOSFET (Metal Oxide)	37 W	20 V	10 V	150 °C	-55 °C	Surface Mount	280 pF	N-Channel	950 mOhm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3
Infineon Technologies IPD60R3K3C6ATMA1		1.7 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-55 °C	Surface Mount	93 pF	N-Channel	3.3 Ohm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	18.1 W			4.6 nC
Infineon Technologies IPD60R380C6		10.6 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-55 °C	Surface Mount		N-Channel	380 mOhm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	83 W	700 pF		32 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.19
		10	$ 0.98
		100	$ 0.76
		500	$ 0.64
		1000	$ 0.52
	Digi-Reel®	1	$ 1.19
		10	$ 0.98
		100	$ 0.76
		500	$ 0.64
		1000	$ 0.52
	Tape & Reel (TR)	2500	$ 0.49
		5000	$ 0.47
		12500	$ 0.45
Newark	Each (Supplied on Cut Tape)	1	$ 1.36
		10	$ 0.66
		25	$ 0.60
		50	$ 0.55
		100	$ 0.50
		250	$ 0.46
		500	$ 0.43
		1000	$ 0.42

Description

General part information

IPD60R Series

The IPD60R750E6 is a 600V CoolMOS™ E6 N-channel Power MOSFET offers easy control of switching behaviour. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ E6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

Documents

Technical documentation and resources