IPD60R3K3C6

Obsolete

Infineon Technologies

MOSFET N-CH 600V 1.7A TO252-3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

IPD60R3K3C6

Obsolete

Infineon Technologies

MOSFET N-CH 600V 1.7A TO252-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD60R3K3C6

Current - Continuous Drain (Id) @ 25°C	1.7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	93 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	18.1 W
Rds On (Max) @ Id, Vgs	3.3 Ohm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPD60R Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max) [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPD60R1K0CEAUMA1	13 nC	6.8 A	600 V	MOSFET (Metal Oxide)	61 W	20 V	10 V	150 °C	-40 °C	Surface Mount	280 pF	N-Channel	1 Ohm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3-344
Infineon Technologies IPD60R520C6BTMA1		8.1 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-55 °C	Surface Mount		N-Channel			DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	66 W	512 pF	520 mOhm	23.4 nC
Infineon Technologies IPD60R380C6ATMA1		10.6 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-55 °C	Surface Mount		N-Channel	380 mOhm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	83 W	700 pF		32 nC
Infineon Technologies IPD60R3K3C6		1.7 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-55 °C	Surface Mount	93 pF	N-Channel	3.3 Ohm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	18.1 W			4.6 nC
Infineon Technologies IPD60R2K0PFD7SAUMA1	3.8 nC	3 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-40 °C	Surface Mount	134 pF	N-Channel	2 Ohm	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3-344	20 W
Infineon Technologies IPD60R1K0PFD7SAUMA1		4.7 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-40 °C	Surface Mount	230 pF	N-Channel	1 Ohm	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	26 W			6 nC
Infineon Technologies IPD60R280P7SE8228AUMA1	18 nC	12 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-40 °C	Surface Mount		N-Channel	280 mOhm	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	53 W
Infineon Technologies IPD60R950C6ATMA1	13 nC	4.4 A	600 V	MOSFET (Metal Oxide)	37 W	20 V	10 V	150 °C	-55 °C	Surface Mount	280 pF	N-Channel	950 mOhm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3
Infineon Technologies IPD60R3K3C6ATMA1		1.7 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-55 °C	Surface Mount	93 pF	N-Channel	3.3 Ohm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	18.1 W			4.6 nC
Infineon Technologies IPD60R380C6		10.6 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-55 °C	Surface Mount		N-Channel	380 mOhm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	83 W	700 pF		32 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPD60R Series

N-Channel 600 V 1.7A (Tc) 18.1W (Tc) Surface Mount PG-TO252-3

Documents

Technical documentation and resources