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IPD60R1K0CEAUMA1 - TO252-3

IPD60R1K0CEAUMA1

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Infineon Technologies

MOSFET, N-CH, 600V, 6.8A, TO-252

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IPD60R1K0CEAUMA1 - TO252-3

IPD60R1K0CEAUMA1

Active
Infineon Technologies

MOSFET, N-CH, 600V, 6.8A, TO-252

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD60R1K0CEAUMA1
Current - Continuous Drain (Id) @ 25°C6.8 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]280 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]61 W
Rds On (Max) @ Id, Vgs1 Ohm
Supplier Device PackagePG-TO252-3-344
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.14
10$ 0.72
100$ 0.47
500$ 0.37
1000$ 0.33
Digi-Reel® 1$ 1.14
10$ 0.72
100$ 0.47
500$ 0.37
1000$ 0.33
Tape & Reel (TR) 2500$ 0.29
5000$ 0.27
7500$ 0.26
12500$ 0.25
NewarkEach (Supplied on Cut Tape) 1$ 0.98
10$ 0.75
25$ 0.69
50$ 0.62
100$ 0.55
250$ 0.51
500$ 0.47
1000$ 0.42

Description

General part information

IPD60R Series

N-Channel 600 V 6.8A (Tc) 61W (Tc) Surface Mount PG-TO252-3-344

Documents

Technical documentation and resources