IPD60R380C6ATMA1

NRND

Infineon Technologies

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 380 MOHM;

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Search across all available documentation for this part.

DocumentsInfineon-MA005726110-MaterialContentSheet-v01_00-EN MOSFET CoolMOS™ benefits in hard and soft switching SMPS topologies +5

IPD60R380C6ATMA1

NRND

Infineon Technologies

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 380 MOHM;

Deep-Dive with AI

DocumentsInfineon-MA005726110-MaterialContentSheet-v01_00-EN MOSFET CoolMOS™ benefits in hard and soft switching SMPS topologies +5

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD60R380C6ATMA1

Current - Continuous Drain (Id) @ 25°C	10.6 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPD60R Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max) [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPD60R1K0CEAUMA1	13 nC	6.8 A	600 V	MOSFET (Metal Oxide)	61 W	20 V	10 V	150 °C	-40 °C	Surface Mount	280 pF	N-Channel	1 Ohm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3-344
Infineon Technologies IPD60R520C6BTMA1		8.1 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-55 °C	Surface Mount		N-Channel			DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	66 W	512 pF	520 mOhm	23.4 nC
Infineon Technologies IPD60R380C6ATMA1		10.6 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-55 °C	Surface Mount		N-Channel	380 mOhm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	83 W	700 pF		32 nC
Infineon Technologies IPD60R3K3C6		1.7 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-55 °C	Surface Mount	93 pF	N-Channel	3.3 Ohm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	18.1 W			4.6 nC
Infineon Technologies IPD60R2K0PFD7SAUMA1	3.8 nC	3 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-40 °C	Surface Mount	134 pF	N-Channel	2 Ohm	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3-344	20 W
Infineon Technologies IPD60R1K0PFD7SAUMA1		4.7 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-40 °C	Surface Mount	230 pF	N-Channel	1 Ohm	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	26 W			6 nC
Infineon Technologies IPD60R280P7SE8228AUMA1	18 nC	12 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-40 °C	Surface Mount		N-Channel	280 mOhm	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	53 W
Infineon Technologies IPD60R950C6ATMA1	13 nC	4.4 A	600 V	MOSFET (Metal Oxide)	37 W	20 V	10 V	150 °C	-55 °C	Surface Mount	280 pF	N-Channel	950 mOhm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3
Infineon Technologies IPD60R3K3C6ATMA1		1.7 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-55 °C	Surface Mount	93 pF	N-Channel	3.3 Ohm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	18.1 W			4.6 nC
Infineon Technologies IPD60R380C6		10.6 A	600 V	MOSFET (Metal Oxide)		20 V	10 V	150 °C	-55 °C	Surface Mount		N-Channel	380 mOhm	3.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	83 W	700 pF		32 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.95
		10	$ 1.26
		100	$ 0.86
		500	$ 0.81
	Digi-Reel®	1	$ 1.95
		10	$ 1.26
		100	$ 0.86
		500	$ 0.81
	Tape & Reel (TR)	2500	$ 0.81
Newark	Each	1	$ 1.79
		10	$ 1.61
		100	$ 1.30
		500	$ 1.01
		1000	$ 0.83

Description

General part information

IPD60R Series

The IPD60R380C6 is a 600V N-channel CoolMOS™ Power MOSFET designed according to the Superjunction (SJ) principle with high class innovation. The C6 MOSFET provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. CoolMOS™ Superjunction power MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems.

Documents

Technical documentation and resources

Datasheet

Technical Data Sheet EN

Datasheet

IPD60R380C6ATMA1

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IPD60R380C6ATMA1

Deep-Dive with AI

Technical Specifications

IPD60R Series

Pricing

Description

IPD60R Series

Documents

Infineon-MA005726110-MaterialContentSheet-v01_00-EN

MOSFET CoolMOS™ benefits in hard and soft switching SMPS topologies

MOSFET some key facts about avalanche

FIT Report - IPD60R380C6

MOSFET CoolMOS™ best-in-class RDSon per package products

Datasheet

Technical Data Sheet EN

IPD60R Series