IRF1010EPBF

NRND

Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 84 A, 0.012 OHM, TO-220AB, THROUGH HOLE

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IRF1010EPBF

NRND

Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 84 A, 0.012 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

DocumentsIR Part Numbering System

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF1010EPBF

Current - Continuous Drain (Id) @ 25°C	84 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds	3210 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF1010 Series

Part	Mounting Type	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Infineon Technologies IRF1010EZPBF	Through Hole	TO-220AB	TO-220-3	86 nC	8.5 mOhm	-55 °C	175 ░C	75 A	2810 pF	10 V	MOSFET (Metal Oxide)	4 V	60 V	N-Channel	20 V	140 W
Infineon Technologies IRF1010ZSTRLPBF	Surface Mount	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		7.5 mOhm	-55 °C	175 ░C	75 A	2840 pF	10 V	MOSFET (Metal Oxide)	4 V	55 V	N-Channel	20 V	140 W	95 nC
Infineon Technologies IRF1010NSTRLPBF	Surface Mount	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 nC		-55 °C	175 ░C	85 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	55 V	N-Channel	20 V	180 W		11 mOhm
Infineon Technologies IRF1010EPBF	Through Hole	TO-220AB	TO-220-3	130 nC		-55 °C	175 ░C	84 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	60 V	N-Channel	20 V	200 W		12 mOhm
Infineon Technologies IRF1010NPBF	Through Hole	TO-220AB	TO-220-3	120 nC		-55 °C	175 ░C	85 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	55 V	N-Channel	20 V	180 W		11 mOhm
Infineon Technologies IRF1010ESTRLPBF	Surface Mount	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	130 nC		-55 °C	175 ░C	84 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	60 V	N-Channel	20 V	200 W		12 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.10
		10	$ 1.34
		100	$ 0.91
		500	$ 0.72
		1000	$ 0.67
		2000	$ 0.61
		5000	$ 0.58
Newark	Each	1	$ 1.69
		10	$ 1.28
		100	$ 1.09
		500	$ 0.94
		1000	$ 0.90
		3000	$ 0.89
		10000	$ 0.85

Description

General part information

IRF1010 Series

The IRF1010EPBF is a 60V single N-channel HEXFET Power MOSFET with advanced process technology. Advanced HEXFET® power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Documents

Technical documentation and resources