IRF1010 Series

Catalog

POWER MOSFET, N CHANNEL, 60 V, 75 A, 0.0085 OHM, TO-220AB, THROUGH HOLE

Part	Mounting Type	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Infineon Technologies IRF1010EZPBF	Through Hole	TO-220AB	TO-220-3	86 nC	8.5 mOhm	-55 °C	175 ░C	75 A	2810 pF	10 V	MOSFET (Metal Oxide)	4 V	60 V	N-Channel	20 V	140 W
Infineon Technologies IRF1010ZSTRLPBF	Surface Mount	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		7.5 mOhm	-55 °C	175 ░C	75 A	2840 pF	10 V	MOSFET (Metal Oxide)	4 V	55 V	N-Channel	20 V	140 W	95 nC
Infineon Technologies IRF1010NSTRLPBF	Surface Mount	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 nC		-55 °C	175 ░C	85 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	55 V	N-Channel	20 V	180 W		11 mOhm
Infineon Technologies IRF1010EPBF	Through Hole	TO-220AB	TO-220-3	130 nC		-55 °C	175 ░C	84 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	60 V	N-Channel	20 V	200 W		12 mOhm
Infineon Technologies IRF1010NPBF	Through Hole	TO-220AB	TO-220-3	120 nC		-55 °C	175 ░C	85 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	55 V	N-Channel	20 V	180 W		11 mOhm
Infineon Technologies IRF1010ESTRLPBF	Surface Mount	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	130 nC		-55 °C	175 ░C	84 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	60 V	N-Channel	20 V	200 W		12 mOhm