IRF1010NSTRLPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 11 MOHM;

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IRF1010NSTRLPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 11 MOHM;

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DocumentsIR Part Numbering System Datasheet +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF1010NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	3210 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF1010 Series

Part	Mounting Type	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Infineon Technologies IRF1010EZPBF	Through Hole	TO-220AB	TO-220-3	86 nC	8.5 mOhm	-55 °C	175 ░C	75 A	2810 pF	10 V	MOSFET (Metal Oxide)	4 V	60 V	N-Channel	20 V	140 W
Infineon Technologies IRF1010ZSTRLPBF	Surface Mount	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		7.5 mOhm	-55 °C	175 ░C	75 A	2840 pF	10 V	MOSFET (Metal Oxide)	4 V	55 V	N-Channel	20 V	140 W	95 nC
Infineon Technologies IRF1010NSTRLPBF	Surface Mount	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 nC		-55 °C	175 ░C	85 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	55 V	N-Channel	20 V	180 W		11 mOhm
Infineon Technologies IRF1010EPBF	Through Hole	TO-220AB	TO-220-3	130 nC		-55 °C	175 ░C	84 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	60 V	N-Channel	20 V	200 W		12 mOhm
Infineon Technologies IRF1010NPBF	Through Hole	TO-220AB	TO-220-3	120 nC		-55 °C	175 ░C	85 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	55 V	N-Channel	20 V	180 W		11 mOhm
Infineon Technologies IRF1010ESTRLPBF	Surface Mount	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	130 nC		-55 °C	175 ░C	84 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	60 V	N-Channel	20 V	200 W		12 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.56
		10	$ 1.65
		100	$ 1.13
	Digi-Reel®	1	$ 2.56
		10	$ 1.65
		100	$ 1.13
	Tape & Reel (TR)	800	$ 0.86
		1600	$ 0.80
		2400	$ 0.76
		4000	$ 0.76
Newark	Each (Supplied on Cut Tape)	1	$ 1.88
		10	$ 1.47
		25	$ 1.40
		50	$ 1.31
		100	$ 1.24
		250	$ 1.22
		500	$ 1.13
		1600	$ 1.04

Description

General part information

IRF1010 Series

The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.

IRF1010NSTRLPBF

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IRF1010NSTRLPBF

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Technical Specifications

IRF1010 Series

Pricing

Description

IRF1010 Series

Documents

IR Part Numbering System

Datasheet

Application Note EN

IRF1010 Series