IRF1010EZPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 75 A, 0.0085 OHM, TO-220AB, THROUGH HOLE

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IRF1010EZPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 60 V, 75 A, 0.0085 OHM, TO-220AB, THROUGH HOLE

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DocumentsIR Part Numbering System Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF1010EZPBF

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	86 nC
Input Capacitance (Ciss) (Max) @ Vds	2810 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs [Max]	8.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF1010 Series

Part	Mounting Type	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Infineon Technologies IRF1010EZPBF	Through Hole	TO-220AB	TO-220-3	86 nC	8.5 mOhm	-55 °C	175 ░C	75 A	2810 pF	10 V	MOSFET (Metal Oxide)	4 V	60 V	N-Channel	20 V	140 W
Infineon Technologies IRF1010ZSTRLPBF	Surface Mount	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		7.5 mOhm	-55 °C	175 ░C	75 A	2840 pF	10 V	MOSFET (Metal Oxide)	4 V	55 V	N-Channel	20 V	140 W	95 nC
Infineon Technologies IRF1010NSTRLPBF	Surface Mount	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 nC		-55 °C	175 ░C	85 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	55 V	N-Channel	20 V	180 W		11 mOhm
Infineon Technologies IRF1010EPBF	Through Hole	TO-220AB	TO-220-3	130 nC		-55 °C	175 ░C	84 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	60 V	N-Channel	20 V	200 W		12 mOhm
Infineon Technologies IRF1010NPBF	Through Hole	TO-220AB	TO-220-3	120 nC		-55 °C	175 ░C	85 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	55 V	N-Channel	20 V	180 W		11 mOhm
Infineon Technologies IRF1010ESTRLPBF	Surface Mount	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	130 nC		-55 °C	175 ░C	84 A	3210 pF	10 V	MOSFET (Metal Oxide)	4 V	60 V	N-Channel	20 V	200 W		12 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 0.83
		10	$ 0.64
		100	$ 0.60
		500	$ 0.59
		1000	$ 0.54
		3000	$ 0.48
Digikey	Tube	1	$ 1.90
		10	$ 1.22
		100	$ 0.83
		500	$ 0.66
		1000	$ 0.61
		2000	$ 0.61
Newark	Each	1	$ 1.42
		10	$ 1.10
		100	$ 0.78
		500	$ 0.71
		1000	$ 0.66
		3000	$ 0.63
		10000	$ 0.60

Description

General part information

IRF1010 Series

The IRF1010EZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Documents

Technical documentation and resources