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SPP80N03S2-03 - TO-220-3

SPP80N03S2-03

Obsolete
Infineon Technologies

MOSFET N-CH 30V 80A TO220-3

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SPP80N03S2-03 - TO-220-3

SPP80N03S2-03

Obsolete
Infineon Technologies

MOSFET N-CH 30V 80A TO220-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSPP80N03S2-03
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC
Input Capacitance (Ciss) (Max) @ Vds7020 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs3.4 mOhm
Supplier Device PackagePG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

SPP80N Series

N-Channel 30 V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1

Documents

Technical documentation and resources