SPP80N Series

Catalog

MOSFET N-CH 30V 80A TO220-3

Part	Power Dissipation (Max)	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Mounting Type	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies SPP80N03S2L05AKSA1	167 W	N-Channel	TO-220-3	30 V	2 V	Through Hole	MOSFET (Metal Oxide)	20 V	3320 pF	-55 °C	175 ░C	4.5 V 10 V	PG-TO220-3-1	89.7 nC	5.2 mOhm
Infineon Technologies SPP80N06S2-08	215 W	N-Channel	TO-220-3	55 V		Through Hole	MOSFET (Metal Oxide)	20 V	3800 pF	-55 °C	175 ░C	10 V	PG-TO220-3-1	96 nC	8 mOhm	4 V
Infineon Technologies SPP80N03S2-03		N-Channel	TO-220-3	30 V		Through Hole	MOSFET (Metal Oxide)	20 V	7020 pF	-55 °C	175 ░C	10 V	PG-TO220-3-1		3.4 mOhm	4 V	300 W	150 nC
Infineon Technologies SPP80N04S2L-03		N-Channel	TO-220-3	40 V		Through Hole	MOSFET (Metal Oxide)	20 V	7930 pF	-55 °C	175 ░C	4.5 V 10 V	PG-TO220-3-1		3.4 mOhm	2 V	300 W	213 nC
Infineon Technologies SPP80N06S2-09		N-Channel	TO-220-3	55 V		Through Hole	MOSFET (Metal Oxide)	20 V	3140 pF	-55 °C	175 ░C	10 V	PG-TO220-3-1		9.1 mOhm		190 W	80 nC