SPP80N03S2L05AKSA1
ObsoleteInfineon Technologies
MOSFET N-CH 30V 80A TO220-3
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SPP80N03S2L05AKSA1
ObsoleteInfineon Technologies
MOSFET N-CH 30V 80A TO220-3
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SPP80N03S2L05AKSA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 89.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3320 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 167 W |
| Rds On (Max) @ Id, Vgs | 5.2 mOhm |
| Supplier Device Package | PG-TO220-3-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2 V |
SPP80N Series
| Part | Power Dissipation (Max) | FET Type | Package / Case | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id [Max] | Mounting Type | Technology | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 167 W | N-Channel | TO-220-3 | 30 V | 2 V | Through Hole | MOSFET (Metal Oxide) | 20 V | 3320 pF | -55 °C | 175 ░C | 4.5 V 10 V | PG-TO220-3-1 | 89.7 nC | 5.2 mOhm | |||
Infineon Technologies | 215 W | N-Channel | TO-220-3 | 55 V | Through Hole | MOSFET (Metal Oxide) | 20 V | 3800 pF | -55 °C | 175 ░C | 10 V | PG-TO220-3-1 | 96 nC | 8 mOhm | 4 V | |||
Infineon Technologies | N-Channel | TO-220-3 | 30 V | Through Hole | MOSFET (Metal Oxide) | 20 V | 7020 pF | -55 °C | 175 ░C | 10 V | PG-TO220-3-1 | 3.4 mOhm | 4 V | 300 W | 150 nC | |||
Infineon Technologies | N-Channel | TO-220-3 | 40 V | Through Hole | MOSFET (Metal Oxide) | 20 V | 7930 pF | -55 °C | 175 ░C | 4.5 V 10 V | PG-TO220-3-1 | 3.4 mOhm | 2 V | 300 W | 213 nC | |||
Infineon Technologies | N-Channel | TO-220-3 | 55 V | Through Hole | MOSFET (Metal Oxide) | 20 V | 3140 pF | -55 °C | 175 ░C | 10 V | PG-TO220-3-1 | 9.1 mOhm | 190 W | 80 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SPP80N Series
N-Channel 30 V 80A (Tc) 167W (Tc) Through Hole PG-TO220-3-1
Documents
Technical documentation and resources