IRF4905STRLPBF
ActiveP-CHANNEL MOSFET WITH A MAXIMUM CONTINUOUS DRAIN CURRENT OF 74 A, MAXIMUM OPERATING VOLTAGE OF 55 V, AND MAXIMUM POWER DISSIPATION OF 170 W.
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IRF4905STRLPBF
ActiveP-CHANNEL MOSFET WITH A MAXIMUM CONTINUOUS DRAIN CURRENT OF 74 A, MAXIMUM OPERATING VOLTAGE OF 55 V, AND MAXIMUM POWER DISSIPATION OF 170 W.
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRF4905STRLPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 42 A |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 170 W |
| Rds On (Max) @ Id, Vgs | 20 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
IRF4905 Series
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Power Dissipation (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 mOhm | 42 A | D2PAK | -55 °C | 175 ░C | MOSFET (Metal Oxide) | 4 V | 55 V | 3500 pF | 20 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 180 nC | Surface Mount | 170 W | P-Channel |
Infineon Technologies | 20 mOhm | 42 A | TO-262 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 4 V | 55 V | 3500 pF | 20 V | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | 180 nC | Through Hole | 170 W | P-Channel |
Infineon Technologies | 20 mOhm | 42 A | D2PAK | -55 °C | 150 °C | MOSFET (Metal Oxide) | 4 V | 55 V | 3500 pF | 20 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 180 nC | Surface Mount | 170 W | P-Channel |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRF4905 Series
The IRF4905STRLPBF is a -55V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. It features combine to make this design an extremely efficient and reliable device for wide variety of other applications.
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Technical documentation and resources