MOSFET P-CH 55V 42A D2PAK
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Power Dissipation (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 mOhm | 42 A | D2PAK | -55 °C | 175 ░C | MOSFET (Metal Oxide) | 4 V | 55 V | 3500 pF | 20 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 180 nC | Surface Mount | 170 W | P-Channel |
Infineon Technologies | 20 mOhm | 42 A | TO-262 | -55 °C | 150 °C | MOSFET (Metal Oxide) | 4 V | 55 V | 3500 pF | 20 V | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | 180 nC | Through Hole | 170 W | P-Channel |
Infineon Technologies | 20 mOhm | 42 A | D2PAK | -55 °C | 150 °C | MOSFET (Metal Oxide) | 4 V | 55 V | 3500 pF | 20 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 180 nC | Surface Mount | 170 W | P-Channel |