IRF4905STRRPBF

Obsolete

Infineon Technologies

MOSFET P-CH 55V 42A D2PAK

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Obsolete

Infineon Technologies

MOSFET P-CH 55V 42A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRF4905STRRPBF

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds	3500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	170 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power Dissipation (Max)	FET Type
Infineon Technologies IRF4905STRRPBF	20 mOhm	42 A	D2PAK	-55 °C	175 ░C	MOSFET (Metal Oxide)	4 V	55 V	3500 pF	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	180 nC	Surface Mount	170 W	P-Channel
Infineon Technologies IRF4905LPBF	20 mOhm	42 A	TO-262	-55 °C	150 °C	MOSFET (Metal Oxide)	4 V	55 V	3500 pF	20 V	I2PAK TO-262-3 Long Leads TO-262AA	10 V	180 nC	Through Hole	170 W	P-Channel
Infineon Technologies IRF4905STRLPBF	20 mOhm	42 A	D2PAK	-55 °C	150 °C	MOSFET (Metal Oxide)	4 V	55 V	3500 pF	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	180 nC	Surface Mount	170 W	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly