IRF4905LPBF

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Infineon Technologies

POWER MOSFET, P CHANNEL, 55 V, 74 A, 0.02 OHM, TO-262, THROUGH HOLE

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IRF4905LPBF

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Infineon Technologies

POWER MOSFET, P CHANNEL, 55 V, 74 A, 0.02 OHM, TO-262, THROUGH HOLE

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Technical Specifications

Parameters and characteristics for this part

Specification	IRF4905LPBF

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds	3500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	170 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF4905 Series

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Power Dissipation (Max)	FET Type
Infineon Technologies IRF4905STRRPBF	20 mOhm	42 A	D2PAK	-55 °C	175 ░C	MOSFET (Metal Oxide)	4 V	55 V	3500 pF	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	180 nC	Surface Mount	170 W	P-Channel
Infineon Technologies IRF4905LPBF	20 mOhm	42 A	TO-262	-55 °C	150 °C	MOSFET (Metal Oxide)	4 V	55 V	3500 pF	20 V	I2PAK TO-262-3 Long Leads TO-262AA	10 V	180 nC	Through Hole	170 W	P-Channel
Infineon Technologies IRF4905STRLPBF	20 mOhm	42 A	D2PAK	-55 °C	150 °C	MOSFET (Metal Oxide)	4 V	55 V	3500 pF	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	180 nC	Surface Mount	170 W	P-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.45
		10	$ 2.25
		100	$ 1.57
		500	$ 1.27
		1000	$ 1.18
		2000	$ 1.10
		5000	$ 1.10
Newark	Each	1	$ 2.80
		10	$ 1.85
		100	$ 1.78
		500	$ 1.68
		1000	$ 1.62

Description

General part information

IRF4905 Series

The IRF4905LPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

IRF4905LPBF

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IRF4905LPBF

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Technical Specifications

IRF4905 Series

Pricing

Description

IRF4905 Series

Documents

Application Note EN

Datasheet

IR Part Numbering System

IRF4905 Series