STB80N4F6AG
ActiveAUTOMOTIVE-GRADE N-CHANNEL 40 V, 5.5 MOHM TYP., 80 A, STRIPFET F6 POWER MOSFET IN A D2PAK PACKAGE
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STB80N4F6AG
ActiveAUTOMOTIVE-GRADE N-CHANNEL 40 V, 5.5 MOHM TYP., 80 A, STRIPFET F6 POWER MOSFET IN A D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB80N4F6AG |
|---|---|
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 70 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 6 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
STB80N4F6AG Series
Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET in a D2PAK package
| Part | Vgs (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Power Dissipation (Max) [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Qualification | Grade | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 20 V | 55 V | -55 °C | 175 ░C | N-Channel | 4 V | I2PAK | MOSFET (Metal Oxide) | 300 W | Through Hole | 4400 pF | I2PAK TO-262-3 Long Leads TO-262AA | 10 V | 189 nC | 6.5 mOhm | |||||||
STMicroelectronics | 20 V | 40 V | -55 °C | 175 ░C | N-Channel | 4 V | TO-263 (D2PAK) | MOSFET (Metal Oxide) | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 6 mOhm | 36 nC | 70 W | AEC-Q101 | Automotive | ||||||
STMicroelectronics | 20 V | 55 V | -55 °C | 175 ░C | N-Channel | 1 V | D2PAK | MOSFET (Metal Oxide) | 300 W | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 6.5 mOhm | 136 nC | ||||||||
STMicroelectronics | 25 V | 200 V | N-Channel | 5 V | D2PAK | MOSFET (Metal Oxide) | 190 W | Surface Mount | 4329 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 23 mOhm | 104 nC | 150 °C | 61 A | |||||||
STMicroelectronics | 20 V | 30 V | -60 °C | 175 ░C | N-Channel | 1 V | D2PAK | MOSFET (Metal Oxide) | 300 W | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4.5 V 10 V | 4 mOhm | 110 nC | 5500 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.09 | |
| 10 | $ 1.45 | |||
| 100 | $ 1.11 | |||
| 500 | $ 0.90 | |||
| Digi-Reel® | 1 | $ 2.09 | ||
| 10 | $ 1.45 | |||
| 100 | $ 1.11 | |||
| 500 | $ 0.90 | |||
| Tape & Reel (TR) | 1000 | $ 0.82 | ||
| 2000 | $ 0.76 | |||
| 3000 | $ 0.74 | |||
| 5000 | $ 0.72 | |||
Description
General part information
STB80N4F6AG Series
These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.
Documents
Technical documentation and resources