STB80 Series

N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh M5 Power MOSFET in D2PAK Package

Catalog

N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh M5 Power MOSFET in D2PAK Package

Part	Technology	Vgs (Max)	Rds On (Max)	Power Dissipation (Max)	Package Name	Input Capacitance (Ciss) (Max)	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Vgs(th) (Max)	Grade	Qualification	Operating Temperature	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
STMicroelectronics STB80NF55-06-1	MOSFET (Metal Oxide)	20 V	6.5 mOhm	300 W	I2PAK	4400 pF	I2PAK TO-262-3 Long Leads TO-262AA	55 V	80 A	-55 °C	175 °C	189 nC	10 V	Through Hole	N-Channel	4 V
STMicroelectronics STB80N4F6AG	MOSFET (Metal Oxide)	20 V	6 mOhm	70 W	TO-263 (D2PAK)	2150 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	40 V	80 A	-55 °C	175 °C	36 nC 36 nC	10 V	Surface Mount	N-Channel	4 V	Automotive	AEC-Q101
STMicroelectronics STB80NF55L-06T4	MOSFET (Metal Oxide)	20 V	6.5 mOhm	300 W	D2PAK	4850 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	55 V	80 A	-55 °C	175 °C	136 nC	10 V	Surface Mount	N-Channel	1 V
STMicroelectronics STB80NF55-06T4	MOSFET (Metal Oxide)	20 V	6.5 mOhm	300 W	D2PAK	4400 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	55 V	80 A	-55 °C	175 °C	189 nC	10 V	Surface Mount	N-Channel	4 V
STMicroelectronics STB80N20M5	MOSFET (Metal Oxide)	25 V	23 mOhm	190 W	D2PAK	4329 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 V	61 A			104 nC 104 nC	10 V	Surface Mount	N-Channel	5 V			150 °C
STMicroelectronics STB80NF03L-04T4	MOSFET (Metal Oxide)	20 V	4 mOhm	300 W	D2PAK	5500 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	80 A	-60 °C	175 °C	110 nC		Surface Mount	N-Channel	1 V				10 V	4.5 V

Catalog

N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh M5 Power MOSFET in D2PAK Package

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.