STB80N20M5

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STMicroelectronics

N-CHANNEL 200 V, 0.019 OHM TYP., 61 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE

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DocumentsProduct Change Notice EN Technical Data Sheet EN +16

STB80N20M5

Active

STMicroelectronics

N-CHANNEL 200 V, 0.019 OHM TYP., 61 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE

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DocumentsProduct Change Notice EN Technical Data Sheet EN +16

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB80N20M5

Current - Continuous Drain (Id) @ 25°C	61 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	104 nC
Input Capacitance (Ciss) (Max) @ Vds	4329 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STB80N4F6AG Series

Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET in a D2PAK package

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Power Dissipation (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Qualification	Grade	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STB80NF55-06-1	20 V	55 V	-55 °C	175 ░C	N-Channel	4 V	I2PAK	MOSFET (Metal Oxide)	300 W	Through Hole	4400 pF	I2PAK TO-262-3 Long Leads TO-262AA	10 V	189 nC	6.5 mOhm
STMicroelectronics STB80N4F6AG	20 V	40 V	-55 °C	175 ░C	N-Channel	4 V	TO-263 (D2PAK)	MOSFET (Metal Oxide)		Surface Mount		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V		6 mOhm	36 nC	70 W	AEC-Q101	Automotive
STMicroelectronics STB80NF55L-06T4	20 V	55 V	-55 °C	175 ░C	N-Channel	1 V	D2PAK	MOSFET (Metal Oxide)	300 W	Surface Mount		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V		6.5 mOhm	136 nC
STMicroelectronics STB80N20M5	25 V	200 V			N-Channel	5 V	D2PAK	MOSFET (Metal Oxide)	190 W	Surface Mount	4329 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V		23 mOhm	104 nC				150 °C	61 A
STMicroelectronics STB80NF03L-04T4	20 V	30 V	-60 °C	175 ░C	N-Channel	1 V	D2PAK	MOSFET (Metal Oxide)	300 W	Surface Mount		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V		4 mOhm	110 nC						5500 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 6.52
		10	$ 4.52
		100	$ 3.41
	Digi-Reel®	1	$ 6.52
		10	$ 4.52
		100	$ 3.41
	Tape & Reel (TR)	1000	$ 2.79
Newark	Each (Supplied on Cut Tape)	1	$ 6.29
		10	$ 4.34
		25	$ 3.96
		50	$ 3.62
		100	$ 3.38
		250	$ 3.12
		500	$ 3.02
		1000	$ 2.92

Description

General part information

STB80N4F6AG Series

These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.

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Technical documentation and resources

STB80N20M5

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STB80N20M5

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Technical Specifications

STB80N4F6AG Series

Pricing

Description

STB80N4F6AG Series

Documents

Product Change Notice EN

Technical Data Sheet EN

Datasheet

AN1703

AN4390

TN1224

AN3267

AN4191

DS6286

TN1225

UM1575

AN4337

STB80N4F6AG Series