STB80NF55-06-1

Obsolete

STMicroelectronics

MOSFET N-CH 55V 80A I2PAK

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STB80NF55-06-1

Obsolete

STMicroelectronics

MOSFET N-CH 55V 80A I2PAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB80NF55-06-1

Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	189 nC
Input Capacitance (Ciss) (Max) @ Vds	4400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STB80N4F6AG Series

Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET in a D2PAK package

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Power Dissipation (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Qualification	Grade	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STB80NF55-06-1	20 V	55 V	-55 °C	175 ░C	N-Channel	4 V	I2PAK	MOSFET (Metal Oxide)	300 W	Through Hole	4400 pF	I2PAK TO-262-3 Long Leads TO-262AA	10 V	189 nC	6.5 mOhm
STMicroelectronics STB80N4F6AG	20 V	40 V	-55 °C	175 ░C	N-Channel	4 V	TO-263 (D2PAK)	MOSFET (Metal Oxide)		Surface Mount		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V		6 mOhm	36 nC	70 W	AEC-Q101	Automotive
STMicroelectronics STB80NF55L-06T4	20 V	55 V	-55 °C	175 ░C	N-Channel	1 V	D2PAK	MOSFET (Metal Oxide)	300 W	Surface Mount		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V		6.5 mOhm	136 nC
STMicroelectronics STB80N20M5	25 V	200 V			N-Channel	5 V	D2PAK	MOSFET (Metal Oxide)	190 W	Surface Mount	4329 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V		23 mOhm	104 nC				150 °C	61 A
STMicroelectronics STB80NF03L-04T4	20 V	30 V	-60 °C	175 ░C	N-Channel	1 V	D2PAK	MOSFET (Metal Oxide)	300 W	Surface Mount		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V		4 mOhm	110 nC						5500 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STB80N4F6AG Series

These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.

Documents

Technical documentation and resources