IPA80R1K4P7XKSA1
ActiveCOOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 800 V ; TO-220 FULLPAK PACKAGE; 1400 MOHM; PRICE/PERFORMANCE
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IPA80R1K4P7XKSA1
ActiveCOOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 800 V ; TO-220 FULLPAK PACKAGE; 1400 MOHM; PRICE/PERFORMANCE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPA80R1K4P7XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 10 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 250 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 24 W |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPA80R1 Series
800V CoolMOS™ P7superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on)products. Overall, it helps customers save BOM cost and reduce assembly effort.
Documents
Technical documentation and resources