IPA80R1 Series

Catalog

MOSFET, N-CH, 800V, 5.7A, TO-220FP

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPA80R1K0CEXKSA2	32 W	10 V	950 mOhm	Through Hole	31 nC	800 V	5.7 A	N-Channel	TO-220-3 Full Pack	20 V	150 °C	-40 °C	MOSFET (Metal Oxide)	PG-TO220-FP	785 pF	3.9 V
Infineon Technologies IPA80R1K4P7XKSA1	24 W	10 V	1.4 Ohm	Through Hole		800 V	4 A	N-Channel	TO-220-3 Full Pack	20 V	150 °C	-55 °C	MOSFET (Metal Oxide)				3.5 V	250 pF	10 nC
Infineon Technologies IPA80R1K4CEXKSA2	31 W	10 V		Through Hole	23 nC	800 V	3.9 A	N-Channel	TO-220-3 Full Pack	20 V	150 °C	-40 °C	MOSFET (Metal Oxide)	PG-TO220-FP	570 pF	3.9 V				1.4 Ohm