Zenode.ai Logo
Beta
K
IPA80R1K0CEXKSA2 - INFINEON IPA045N10N3GXKSA1

IPA80R1K0CEXKSA2

Active
Infineon Technologies

MOSFET, N-CH, 800V, 5.7A, TO-220FP

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
IPA80R1K0CEXKSA2 - INFINEON IPA045N10N3GXKSA1

IPA80R1K0CEXKSA2

Active
Infineon Technologies

MOSFET, N-CH, 800V, 5.7A, TO-220FP

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPA80R1K0CEXKSA2
Current - Continuous Drain (Id) @ 25°C5.7 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC
Input Capacitance (Ciss) (Max) @ Vds785 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)32 W
Rds On (Max) @ Id, Vgs950 mOhm
Supplier Device PackagePG-TO220-FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.17
50$ 1.07
100$ 1.02
500$ 0.86
1000$ 0.72
2000$ 0.68
5000$ 0.66
NewarkEach 1$ 1.31
10$ 1.27
100$ 1.23
500$ 1.18
1000$ 1.10
2500$ 1.09
10000$ 1.08

Description

General part information

IPA80R1 Series

N-Channel 800 V 5.7A (Tc) 32W (Tc) Through Hole PG-TO220-FP

Documents

Technical documentation and resources