
IPA80R1K4CEXKSA2
ActiveInfineon Technologies
MOSFET, N-CH, 800V, 3.9A, TO-220FP-3
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IPA80R1K4CEXKSA2
ActiveInfineon Technologies
MOSFET, N-CH, 800V, 3.9A, TO-220FP-3
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IPA80R1K4CEXKSA2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.9 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 31 W |
| Rds On (Max) @ Id, Vgs [Max] | 1.4 Ohm |
| Supplier Device Package | PG-TO220-FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPA80R1 Series
N-Channel 800 V 3.9A (Tc) 31W (Tc) Through Hole PG-TO220-FP
Documents
Technical documentation and resources