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IPA80R1K4CEXKSA2 - INFINEON SPP11N60C3XKSA1

IPA80R1K4CEXKSA2

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Infineon Technologies

MOSFET, N-CH, 800V, 3.9A, TO-220FP-3

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IPA80R1K4CEXKSA2 - INFINEON SPP11N60C3XKSA1

IPA80R1K4CEXKSA2

Active
Infineon Technologies

MOSFET, N-CH, 800V, 3.9A, TO-220FP-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPA80R1K4CEXKSA2
Current - Continuous Drain (Id) @ 25°C3.9 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC
Input Capacitance (Ciss) (Max) @ Vds570 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)31 W
Rds On (Max) @ Id, Vgs [Max]1.4 Ohm
Supplier Device PackagePG-TO220-FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.56
10$ 1.00
100$ 0.68
500$ 0.60
NewarkEach 1$ 2.12
10$ 1.71
100$ 1.18
500$ 1.00
1000$ 0.89
2500$ 0.87
10000$ 0.85

Description

General part information

IPA80R1 Series

N-Channel 800 V 3.9A (Tc) 31W (Tc) Through Hole PG-TO220-FP

Documents

Technical documentation and resources