STF11N60DM2

LTB

STMicroelectronics

N-CHANNEL 600 V, 370 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A TO-220FP PACKAGE

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STF11N60DM2

LTB

STMicroelectronics

N-CHANNEL 600 V, 370 MOHM TYP., 10 A MDMESH DM2 POWER MOSFET IN A TO-220FP PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

STF11 Series

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

Technical Specifications

Parameters and characteristics for this part

Specification	STF11N60DM2

Current - Continuous Drain (Id) (Tc)	10 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	16.5 nC
Input Capacitance (Ciss) (Max)	614 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	TO-220FP
Power Dissipation (Max)	25 W
Rds On (Max)	420 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	5 V

STF11 Series

N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP package

Part	Package / Case	Current - Continuous Drain (Id) (Tc)	Operating Temperature	Rds On (Max)	Vgs (Max)	Package Name	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max)	Technology	FET Type	Operating Temperature (Min)	Operating Temperature (Max)
STMicroelectronics STF11NM50N	TO-220-3 Full Pack	8.5 A	150 °C	470 mOhm	25 V	TO-220FP	25 W	500 V	19 nC	547 pF	10 V	Through Hole	4 V	MOSFET (Metal Oxide)	N-Channel
STMicroelectronics STF11NM65N	TO-220-3 Full Pack	11 A	150 °C	455 mOhm	25 V	TO-220FP	25 W	650 V	29 nC	800 pF	10 V	Through Hole	4 V	MOSFET (Metal Oxide)	N-Channel
STMicroelectronics STF11N60DM2	TO-220-3 Full Pack	10 A		420 mOhm	25 V	TO-220FP	25 W	600 V	16.5 nC	614 pF	10 V	Through Hole	5 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C
STMicroelectronics STF11N50M2	TO-220-3 Full Pack	8 A		530 mOhm	25 V	TO-220FP	25 W	500 V	12 nC	395 pF	10 V	Through Hole	4 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C
STMicroelectronics STF11N60M2-EP	TO-220-3 Full Pack	7.5 A		595 mOhm	25 V	TO-220FP	25 W	600 V	12.4 nC	390 pF	10 V	Through Hole	4.75 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C
STMicroelectronics STF11N65M5	TO-220-3 Full Pack	9 A	150 °C	480 mOhm	25 V	TO-220FP	25 W	650 V	17 nC	644 pF	10 V	Through Hole	5 V	MOSFET (Metal Oxide)	N-Channel
STMicroelectronics STF11NM80	TO-220-3 Full Pack	11 A		400 mOhm	30 V	TO-220FP	35 W	800 V	43.6 nC	1630 pF	10 V	Through Hole	5 V	MOSFET (Metal Oxide)	N-Channel	-65 °C	150 °C

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Product Change Notice EN

STF11N60DM2 | Datasheet