
STF11N50M2
ObsoleteMOSFET N-CH 500V 8A TO220FP

STF11N50M2
ObsoleteMOSFET N-CH 500V 8A TO220FP
Description
General part information
STF11 Series
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Technical Specifications
Parameters and characteristics for this part
| Specification | STF11N50M2 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 8 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 12 nC |
| Input Capacitance (Ciss) (Max) | 395 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220FP |
| Power Dissipation (Max) | 25 W |
| Rds On (Max) | 530 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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Documents
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