STF11N50M2

Obsolete

STMicroelectronics

MOSFET N-CH 500V 8A TO220FP

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STF11N50M2

Obsolete

STMicroelectronics

MOSFET N-CH 500V 8A TO220FP

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF11N50M2

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	395 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs [Max]	530 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STF11N60M2-EP Series

N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP package

Part	Operating Temperature	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
STMicroelectronics STF11NM50N	150 °C	TO-220FP	10 V	N-Channel	25 W	MOSFET (Metal Oxide)	500 V	4 V	19 nC	25 V	8.5 A	Through Hole	547 pF	TO-220-3 Full Pack	470 mOhm
STMicroelectronics STF11NM65N	150 °C	TO-220FP	10 V	N-Channel	25 W	MOSFET (Metal Oxide)	650 V	4 V	29 nC	25 V	11 A	Through Hole	800 pF	TO-220-3 Full Pack	455 mOhm
STMicroelectronics STF11N50M2		TO-220FP	10 V	N-Channel	25 W	MOSFET (Metal Oxide)	500 V	4 V		25 V	8 A	Through Hole	395 pF	TO-220-3 Full Pack		530 mOhm	-55 °C	150 °C	12 nC
STMicroelectronics STF11N60M2-EP		TO-220FP	10 V	N-Channel	25 W	MOSFET (Metal Oxide)	600 V	4.75 V	12.4 nC	25 V	7.5 A	Through Hole		TO-220-3 Full Pack	595 mOhm		-55 °C	150 °C		390 pF
STMicroelectronics STF11NM80		TO-220FP	10 V	N-Channel		MOSFET (Metal Oxide)	800 V	5 V		30 V	11 A	Through Hole	1630 pF	TO-220-3 Full Pack	400 mOhm		-65 °C	150 °C	43.6 nC		35 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.33
		50	$ 1.07
		100	$ 0.85

Description

General part information

STF11N60M2-EP Series

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

Documents

Technical documentation and resources